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BAR81...
Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation

using
lines
BAR81W
4 3
1
2
Type BAR81W
Package SOT343
Configuration single shunt-diode
LS(nH) Marking 0.15* BBs
* series inductance chip to ground
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1)
1For
Symbol VR IF Ptot Tj Top Tstg Symbol
RthJS
Value 30 100 100 150 -55 ... 125 -55 ... 150
Unit V mA mW C
calculation of RthJA please refer to Application Note Thermal Resistance
1
Ts
138C
Value 120
Unit K/W
Dec-20-2002
BAR81...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, I-region width Shunt insertion loss1) VR = 3 V, f = 1.89 GHz Shunt isolation1) IF = 10 mA , f = 1.89 GHz Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF
Symbol min. IR VF -
Values typ. 0.93 max. 20 1
Unit
nA V
CT rf
rr
pF 0.6 0.57 0.7 80 1 0.9 1 -
1For
more information please refer to Application Note 049.
RL = 100
2
Charge carrier life time
-
WI |S21|2 |S21|2
-
3.5 0.7 30
-
Dec-20-2002
ns m dB
-
BAR81...
Diode capacitance CT = f = Parameter
1
F
10 4
KOhm 100 MHz
10 3 0.8
CT
0.7
Rp
10 2
1 GHz 1.8 GHz
0.6 10 1
1 MHz ... 1.8 GHz
0.5
0.4
10 0
0.3 10 -1 0
0.2 0
2
4
6
8
10
12
14
16
V
20
2
4
6
8
10
12
14
16
VR
f = 100MHz
10
1
TA = Parameter
10 0 A
10 -1
Ohm
10 -2
10
0
IF
rf
10 -3
10 -4
10 -5
10
-1
10
-2
10
-1
10
0
10
1
mA 10 2
10 -6 0
0.2
0.4
IF
3
Forward resistance rf =
(I F)
Forward current IF =
(VF)
-40 C 25 C 85 C 125 C
0.6
0.8
V
Dec-20-2002
(VR )
Reverse parallel resistance RP = (VR ) f = Parameter
V
20
VR
1.2
VF
BAR81...
Forward current IF = BAR81W
120 mA 100 90 80
BAR81W
10 3
K/W
70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 150
RthJS
10 2
IF
10
1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
-5 -4 -3 -2 0
10 0 -6 10
10
10
10
10
TS
Permissible Pulse Load
10 2
IFmax/IFDC
-
10 1
10 0 -6 10
10
IFmax / IFDC =
(tp )
BAR81W
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
-5
10
-4
10
-3
10
-2
s
10
0
tP
4
Dec-20-2002
(TS )
Permissible Puls Load RthJS =
(tp )
s
10
tP

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